Low-damage low-k etching with an environmentally friendly CF3I plasma-Reference-Cited by-同舟云学术

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Low-damage low-k etching with an environmentally friendly CF3I plasma

Published:2008-07 Issue:4 Volume:26 Page:875-880
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Soda Eiichi,Kondo Seiichi,Saito Shuichi,Ichihashi Yoshinari,Sato Aiko,Ohtake Hiroto,Samukawa Seiji

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2919137

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

2. Organofluorine Chemical Gases of Industrial Importance in Semiconductor Materials Processing;PATAI'S Chemistry of Functional Groups;2022-12-02

3. Etch Characteristics of Low-K Materials Using CF₃I/C₄F₈/Ar/O₂ Inductively Coupled Plasmas;Science of Advanced Materials;2022-07-01

4. Modification of Porous Ultralow-k Film by Vacuum Ultraviolet Emission;ACS Applied Electronic Materials;2022-06-08

5. Etching kinetics and dielectric properties of SiOC films exposed to Ar and CF4 plasmas;Thin Solid Films;2022-05

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