Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology-Reference-Cited by-同舟云学术

Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology

Published:2002-10 Issue:1-4 Volume:64 Page:35-42
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Fayolle M,Torres J,Passemard G,Fusalba F,Fanget G,Louis D,Assous M,Louveau O,Rivoire M,Haxaire K,Mourier M,Maitrejean S,Besson P,Broussous L,Arnaud L,Feldis H

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. The International Technology Roadmap for Semiconductors, http://member.itrs.net/Files/2001ITRS/home.htm

2. S. Takahashi et al., Tech. Dig. IEDM (1998) 833–836.

3. M. Fayolle et al., Microelectronic engineering v 60/1–2, pp. 119–124.

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