Grown-in vacancy-type defects in poly- and single crystalline silicon investigated by positron annihilation
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:2007018/pdf
Reference16 articles.
1. Influence of defects and temperature on the annihilation of positrons in neutron-irradiated silicon
2. Positron trapping rates and their temperature dependencies in electron-irradiated silicon
3. Positron annihilation and the charge states of the phosphorus-vacancy pair in silicon
4. Positron Annihilations Associated with Defects in Plastically Deformed Si
5. Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium
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