Positron Annihilations Associated with Defects in Plastically Deformed Si-Reference-Cited by-同舟云学术

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Positron Annihilations Associated with Defects in Plastically Deformed Si

Published:1995-09-15 Issue:Part 1, No. 9A Volume:34 Page:4579-4586
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawasuso Atsuo,Suezawa Masashi,Hasegawa Masayuki,Yamaguchi Sadae,Sumino Koji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of a charge delocalization from Se vacancies inBi2Se3: A positron annihilation study of native defects;Physical Review B;2016-07-27

2. Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams;Journal of Applied Physics;2014-10-07

3. Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams;Journal of Applied Physics;2013-08-28

4. Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy;Semiconductor Science and Technology;2012-02-10

5. Grown-in vacancy-type defects in poly- and single crystalline silicon investigated by positron annihilation;The European Physical Journal Applied Physics;2007-01-24

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