Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams-Reference-Cited by-同舟云学术

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Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams

Published:2014-10-07 Issue:13 Volume:116 Page:134501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Uedono Akira¹,Mizushima Yoriko²³,Kim Youngsuk³⁴,Nakamura Tomoji²,Ohba Takayuki³,Yoshihara Nakaaki¹,Oshima Nagayasu⁵,Suzuki Ryoichi⁵

Affiliation:

1. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. Devices & Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan

3. ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan

4. Disco Corporation, Ota, Tokyo 143-8580, Japan

5. Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

Funder

ICE Cube Center, Tokyo Institute of Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896829

Reference30 articles.

1. Wafer-level three-dimensional integrated circuits (3D IC): Schemes and key technologies

2. One-gate-wide CMOS Inverter on laser-recrystallized polysilicon

3. Three-dimensional CMOS IC's Fabricated by using beam recrystallization

4. Future system-on-silicon LSI chips

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2. Reliability of Wafer-Level Ultra-Thinning down to 3 µm using 20 nm-Node DRAMs;2021 IEEE International Reliability Physics Symposium (IRPS);2021-03

3. Morphological characterization and mechanical behavior by dicing and thinning on direct bonded Si wafer;Journal of Manufacturing Processes;2020-10

4. Characterization of the distribution of defects introduced by plasma exposure in Si substrate;Journal of Vacuum Science & Technology A;2019-01

5. Evolution of Thermally-Induced Microstructural Defects in the Fe-9Cr Alloy;physica status solidi (a);2017-11-07

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