Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium-Reference-Cited by-同舟云学术

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Defects in plastically deformed semiconductors studied by positron annihilation: Silicon and germanium

Published:1993-05-15 Issue:20 Volume:47 Page:13266-13276
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Krause-Rehberg R.,Brohl M.,Leipner H. S.,Drost Th.,Polity A.,Beyer U.,Alexander H.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.13266/fulltext

Reference29 articles.

1. Electrical properties of dislocations and point defects in plastically deformed silicon

2. Inhomogeneities in plastically deformed silicon single crystals. II. Deep-level transient spectroscopy investigations ofp- andn-doped silicon

3. A metastable electron trap in plastically deformed silicon

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3. Vacancy complexes in nonequilibrium germanium-tin semiconductors;Applied Physics Letters;2019-06-24

4. Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams;Journal of Applied Physics;2014-10-07

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