Theoretical determination of stable fourfold coordinated vacancy clusters in silicon
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.78.125310/fulltext
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1. Angular Distributions of (α, n) Reaction son Be and C
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4. Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling
5. Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling
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