Resonant photoemission of rare earth doped GaN thin films-Reference-Cited by-同舟云学术

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Resonant photoemission of rare earth doped GaN thin films

Published:2011-09-28 Issue:1 Volume:56 Page:11301
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

McHale S.R.,McClory J.W.,Petrosky J.C.,Wu J.,Palai R.,Losovyj Ya.B.,Dowben P.A.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.epjap.org/10.1051/epjap/2011110235/pdf

Reference58 articles.

1. Crystal field and Zeeman parameters of substitutional Yb3+ ion in GaN

2. Spectra and energy levels of Yb3+ in AlN

3. Optical properties of Yb ions in GaN epilayer

4. Recent developments in rare-earth doped materials for optoelectronics

5. Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rare-earth defects in GaN: A systematic investigation of the lanthanide series;Physical Review Materials;2022-04-15

2. Sign of the superexchange coupling between next-nearest neighbors in EuO;Physical Review B;2012-12-10

3. Rare earth 4f hybridization with the GaN valence band;Semiconductor Science and Technology;2012-10-16

4. The local metallicity of gadolinium doped compound semiconductors;Journal of Physics: Condensed Matter;2012-10-09

5. Resonant photoemission of rare earth doped GaN thin films;The European Physical Journal Applied Physics;2011-09-28

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