The local metallicity of gadolinium doped compound semiconductors-Reference-Cited by-同舟云学术

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The local metallicity of gadolinium doped compound semiconductors

Published:2012-10-09 Issue:44 Volume:24 Page:445801
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Colón Santana J A,Liu Pan,Wang Xianjie,Tang J,McHale S R,Wooten D,McClory J W,Petrosky J C,Wu J,Palai R,Losovjy Ya B,Dowben P A

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference42 articles.

1. The electronic structure change with Gd doping of HfO2 on silicon

2. Gd-doping of HfO2

3. The K-shell Auger electron spectrum of gadolinium obtained using neutron capture in a solid state device

4. Effect of gadolinium doping on the electronic band structure of europium oxide

5. Temperature Dependence of the Electronic Structure and Fermi-Surface Reconstruction ofEu1−xGdxOthrough the Ferromagnetic Metal-Insulator Transition

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1. Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films;Journal of Luminescence;2019-05

2. Growth, luminescence and magnetic properties of GaN:Er semiconductor thin films grown by molecular beam epitaxy;Journal of Physics D: Applied Physics;2017-03-31

3. Visible photoluminescence and room temperature ferromagnetism in high In-content InGaN:Yb nanorods grown by molecular beam epitaxy;Journal of Applied Physics;2015-09-28

4. Effect of Gd doping and O deficiency on the Curie temperature of EuO;Scientific Reports;2015-01-27

5. Rare earth dopant (Nd, Gd, Dy, and Er) hybridization in lithium tetraborate;Frontiers in Physics;2014-05-27

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