Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films-Reference-Cited by-同舟云学术

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Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films

Published:2019-05 Issue: Volume:209 Page:237-243
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Dasari K.,Wang J.,Jadwisienczak W.M.,Dierolf V.,Razeghi M.,Palai R.

Funder

National Science Foundation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference42 articles.

1. New Opportunities for Lanthanide Luminescence

2. Rare-earth-doped materials for applications in quantum information storage and signal processing

3. Luminescent materials for medical application

4. Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications,2010

5. Optical Properties of Strained AlGaN and GaInN on GaN

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1. Ultraviolet up-conversion luminescent tetrahalozincates(II) with triphenylphosphonium cation: Synthesis, optical properties, and DFT calculations;Materials Today Chemistry;2024-07

2. Electronic, magnetic, optical and transport properties of wurtzite-GaN doped with rare earth (RE= Pm, Sm, and Eu): First principles approach;Surfaces and Interfaces;2021-06

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