Rare earth 4f hybridization with the GaN valence band-Reference-Cited by-同舟云学术

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Rare earth 4f hybridization with the GaN valence band

Published:2012-10-16 Issue:11 Volume:27 Page:115017
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wang Lu,Mei Wai-Ning,McHale S R,McClory J W,Petrosky J C,Wu J,Palai R,Losovyj Y B,Dowben P A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference57 articles.

1. Crystal field and Zeeman parameters of substitutional Yb3+ ion in GaN

2. Spectra and energy levels of Yb3+ in AlN

3. Optical properties of Yb ions in GaN epilayer

4. Recent developments in rare-earth doped materials for optoelectronics

5. Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties and passivation mechanism of AlGaN/GaN heterojunction with vacancies: a DFT study;Physica Scripta;2023-04-27

2. Semiconductor Characteristic and Ferromagnetism in Rare Earth (Eu, Er)-Doped AlGaN Alloy: LSDA + U Approach;Brazilian Journal of Physics;2022-12-28

3. An investigation on GaN/ porous-Si NO2 gas sensor fabricated by pulsed laser ablation in liquid;Sensors and Actuators B: Chemical;2022-09

4. First-Principles Computational Exploration of Thermoelectric Properties of Bulk-GaN and Monolayer-GaN;Journal of Electronic Materials;2022-04-05

5. Effect of Erbium doping on GaN electronic and optical properties: First-principles study;Modern Physics Letters B;2019-09-30

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