Author:
Abdul Amir Husam Aldin A.,Fakhri Makram A.,A.Alwahib Ali,Salim Evan T.,Alsultany Forat H.,Hashim U.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Reference91 articles.
1. C.M. Furqan, characterization, Jacob Y.L. Ho, characterization, H.S. Kwok, GaN thin film: Growth and Characterizations by Magnetron Sputtering Surf. Interfaces 26 2021 101364.
2. Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire;Ee;J. Cryst. Growth,2010
3. Gallium nitride -based photodiode: a review;Jabbar;Mater. Today.: Proc.,2021
4. B. Gil, III-Nitride Semiconductors and their modern devices, 18. OUP Oxford, 2013.
5. Review of GaN optical device characteristics, applications, and optical analysis technology;Abdul Amir;Mater. Today.: Proc.,2021
Cited by
16 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献