Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Author:

Abd Rahim Alhan Farhanah,Zainal Badri Nur’Amirah,Radzali Rosfariza,Mahmood Ainorkhilah

Publisher

EDP Sciences

Reference15 articles.

1. Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions

2. An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

3. Ershadiah N.U.R., Abdul B.. Thesis / Undegraduate Project Paper, Falculty of Electrical Engineering, Universiti Teknologi Malaysia (2011).

4. Nataraj L.. D.Eng., University of Delaware, 183, 3440493 (2010)

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study of Strained-SiGe Channel P-MOSFET Using Silvaco TCAD: Impact of Channel Thickness;Key Engineering Materials;2023-05-31

2. Fabrication of low-resistance Sn ohmic contacts on n-type InxGa1-xAsyP1-y for optoelectronic devices;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

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