Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4773992
Reference38 articles.
1. Electric Field Effect in Atomically Thin Carbon Films
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4. Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
5. Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide
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