Affiliation:
1. State Key Laboratory for Modern Optical Instrumentation College of Optical Science and Engineering International Research Center for Advanced Photonics Zhejiang University Zijingang Campus Hangzhou 310058 China
2. Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging Intelligent Optics & Photonics Research Center Jiaxing Research Institute Zhejiang University Jiaxing 314000 China
3. Ningbo Research Institute Zhejiang University Ningbo 315100 China
Abstract
Abstract2D materials (2DMs) meet the demand of broadband and low‐cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon‐2DM photodetectors (PDs). Here, graphene–silicon–graphene waveguide PDs operating at the wavelength bands of 1.55 and 2 µm, showing the potential for large‐scale integration, are demonstrated. For the fabricated PDs, the measured responsivities are ≈0.15 and ≈0.015 mA W−1 for the wavelengths of 1.55 and 1.96 µm, respectively. In particular, the PDs exhibit a high bandwidth of ≈30 GHz, an ultra‐low dark current of tens of pico‐amperes, a high normalized photo‐to‐dark‐current ratio of 1.63 × 106 W−1, as well as a high linear dynamic range of 3 µW to 1.86 mW (and beyond) at 1.55 µm. According to the measurement results for the wavelength bands of 1.55/2.0 µm and the theoretical modeling for the silicon–graphene heterostructure, it is revealed that internal photoemission and photo‐assisted thermionic field emission dominantly contribute to the photoresponse in the graphene–silicon Schottky junctions under moderately high bias voltage, which helps the future work to further improve the performance.
Funder
National Science Fund for Distinguished Young Scholars
National Natural Science Foundation of China
Natural Science Foundation of Zhejiang Province
Fundamental Research Funds for the Central Universities
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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