Affiliation:
1. School of Precision Instrument and Opto‐electronics Engineering Tianjin University Tianjin 300072 China
2. Key Laboratory of Opto‐electronic Information Technology Ministry of Education Tianjin 300072 China
3. Georgia Tech‐Shenzhen Institute Tianjin University Shenzhen 518055 China
4. Department of Chemistry The University of Tokyo Tokyo 113‐0033 Japan
5. School of Physics and Electronic Engineering Xinjiang Normal University Urumqi 830054 China
Abstract
AbstractMid‐infrared (Mid‐IR) integrated optics has tremendous applications in spectroscopic sensing, imaging, and ranging. Compared with visible light and near‐IR wavelengths, the study of mid‐IR photonic integrated devices is limited due to the need for more suitable materials and designs for constructing high‐performance on‐chip optoelectronic devices. Integrating emerging 2D materials with novel waveguide devices opens an avenue to boost the development of high‐performance optoelectronic waveguide devices operating in the mid‐IR wavelength range. This review summarizes the previous progress, current status, and future trends in exploring mid‐IR optoelectronic waveguide devices with 2D materials. Specifically, the authors focus on the research efforts of developing passive photonic devices, modulators, photodetectors, and light sources. Then, the challenges and prospects in this area are discussed. The paper provides a valuable reference for researchers in infrared physics, optoelectronics, integrated optics, material science, sensing, and spectroscopy.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Tianjin Municipality
Natural Science Foundation of Guangdong Province
Japan Society for the Promotion of Science