An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates-Reference-Cited by-同舟云学术

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An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

Published:2013-08-31 Issue:4 Volume:13 Page:367-380
ISSN:1598-1657
Container-title:JSTS:Journal of Semiconductor Technology and Science
language:en
Short-container-title:JSTS:Journal of Semiconductor Technology and Science

Author:

Bhushan Shiv,Sarangi Santunu,Gopi Krishna Saramekala,Santra Abirmoya,Dubey Sarvesh,Tiwari Pramod Kumar

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ocean.kisti.re.kr/downfile/crosscheck/ieek/JAKO201324947257601.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector;EPJ Web of Conferences;2017

2. 2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs;IEEE Transactions on Electron Devices;2016-03

3. The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study;Advances in Natural Sciences: Nanoscience and Nanotechnology;2014-11-27

4. Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates;Journal of Semiconductors;2014-10

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