Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs-Reference-Cited by-同舟云学术

Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs

Published:2022-05-31 Issue: Volume:1062 Page:669-675
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Matacena Ilaria¹,Maresca Luca¹,Riccio Michele¹,Irace Andrea¹,Breglio Giovanni¹,Daliento Santolo¹

Affiliation:

1. University Federico II

Abstract

SiC MOSFETs have already replace silicon-based device in power applications, even if some technological issues are still not solved. The most important of them is related to the complex traps distribution at SiC/SiO2 interface. Interface traps affect the overall device behavior, modifying channel mobility and introducing hysteresis. In this work experimental C-V and I-V curves are carried out on various commercial SiC MOSFET at different temperatures. The focus is the comparison of hysteresis arising in trench and planar SiC MOSFETs.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.1062.669.pdf

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