Characterizations of SiC/SiO<sub>2</sub> Interface Quality Toward High Power MOSFETs Realization-Reference-Cited by-同舟云学术

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Characterizations of SiC/SiO₂ Interface Quality Toward High Power MOSFETs Realization

Published:2004-06 Issue: Volume:457-460 Page:1281-1286
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Ziane D.¹,Bluet Jean Marie²,Guillot Gérard²,Godignon Phillippe³,Montserrat Josep³,Ciechonski R.R⁴,Syväjärvi Mikael⁴,Yakimova Rositza⁴,Chen L.⁵,Mawby Philip A.⁶

Affiliation:

1. INSA

2. INSA de Lyon - Domaine Scientifique de la Doua

3. IMB-CNM, CSIC

4. Linköping University

5. University of Wales Swansea

6. University of Warwick

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.1281.pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of Threshold Voltage Hysteresis in SiC MOSFET Device;Materials Science Forum;2020-07

2. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition;Springer Handbook of Crystal Growth;2010

3. Silicon carbide Schottky diodes and MOSFETs: Solutions to performance problems;2008 13th International Power Electronics and Motion Control Conference;2008-09

4. Electronic structure and band alignment at the HfO2∕4H-SiC interface;Journal of Applied Physics;2007-02

5. Ellipsometric and XPS Studies of 4H-SiC/SiO₂ Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces;Materials Science Forum;2006-10

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