Silicon carbide Schottky diodes and MOSFETs: Solutions to performance problems
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4629335/4635237/04635633.pdf?arnumber=4635633
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI $_{\bf DS}$/dt and Temperature;IEEE Transactions on Power Electronics;2015-06
2. Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing;Bulletin of Materials Science;2015-06
3. Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes;Brazilian Journal of Physics;2014-09-09
4. Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes;Materials Science and Engineering: B;2014-02
5. Influence of operation conditions on true-static DC characteristics and on electro-thermal transient states in silicon carbide Merged PiN Schottky diodes.;Microelectronics Journal;2013-11
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