In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
Author:
Affiliation:
1. Universität Erlangen-Nürnberg
2. University of Erlangen-Nuremberg
3. University of Erlangen-Nürnberg
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.556-557.267.pdf
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03
2. Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping;Crystal Research and Technology;2014-09-19
3. Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography;Materials Science Forum;2014-02
4. Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth;Materials Science Forum;2013-01
5. Bulk Growth of SiC - Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution;Silicon Carbide;2011-03-28
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