Bulk Growth of SiC - Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution-Reference-Cited by-同舟云学术

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Bulk Growth of SiC - Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution

Published:2011-03-28 Issue: Volume: Page:1-31
ISSN:
Container-title:Silicon Carbide
language:
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Author:

Sakwe Sakwe Aloysius,Stockmeier Mathias,Hens Philip,Müller Ralf,Queren Desirée,Kunecke Ulrike,Konias Katja,Hock Rainer,Magerl Andreas,Pons Michel,Winnacker Albrecht,Wellmann Peter

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/9783527629053.ch1/fullpdf

Reference63 articles.

1. Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method

2. SiC single crystal growth by a modified physical vapor transport technique

3. P. Wellmann Compd. Semicond. 2005

4. Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth

5. Vapor growth of SiC bulk crystals and its challenge of doping

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon carbide: a versatile material for biosensor applications;Biomedical Microdevices;2013-01-15

2. Dislocation Analysis of 4H-/6H-SiC Single Crystals Using Micro-Raman Spectroscopy;Materials Science Forum;2013-01

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