Application of 3-D X-Ray Computed Tomography for the <i>In Situ</i> Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth-Reference-Cited by-同舟云学术

Application of 3-D X-Ray Computed Tomography for the In Situ Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth

Published:2013-01 Issue: Volume:740-742 Page:27-30
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Neubauer Georg¹,Salamon Michael²,Roider Florian¹,Uhlmann Norman²,Wellmann Peter J.³

Affiliation:

1. Friedrich-Alexander-Universität Erlangen-Nürnberg

2. Fraunhofer Institute

3. University of Erlangen-Nuremberg

Abstract

In this paper, we present for the first time an in-situ 3-D reconstruction of the SiC crystal growth interface using X-ray computed tomography (CT). We show that the shape of the growth interface can be determined with high precision at growth temperatures above 2100 °C in a conventional 3” PVT (physical vapor transport) growth system.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.740-742.27.pdf

Reference9 articles.

1. P. J. Wellmann, K. Konias, P. Hens, R. Hock, A. Magerl, In-situ observation of polytype switches during SiC PVT bulk growth by high energy X-ray diffraction, Materials Science Forum 615-617 (2009) 23-26.

2. K. Konias, R. Hock, M. Stockmeier, P. J. Wellmann, M. Miller, S. Ossege, A. Magerl, In-situ X-ray measurements of defect generation during PVT growth of SiC, Materials Science Forum 556-557 (2007) 267-270.

3. R. Hock, K. Konias, L. Perdicaro, A. Magerl, P. Hens, P. J. Wellmann, Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction, Materials Science Forum 645-648 (2010) 29-32.

4. I. A. Feldkamp, L. C. Davis, J. W. Kress, PRACTICAL CONE-BEAM ALGORITHM, Journal of the Optical Society of America A: Optics and Image Science, and Vision 1 (1984) 612-619.

5. P. J. Wellmann, M. Bickermann, D. Hofmann, L. Kadinski, M. Selder, T. L. Straubinger, A. Winnacker, In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging, Journal of Crystal Growth 216 (2000).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping;Crystal Research and Technology;2014-09-19