Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC-Reference-Cited by-同舟云学术

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Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC

Published:1998-02 Issue: Volume:264-268 Page:115-118
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Rowland L.B.¹,Burk Albert A.²,Brandt C.D.

Affiliation:

1. Aymont Technology, Inc.

2. Cree, Incorporation

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.264-268.115.pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Industrial Perspective of SiC Epitaxy;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

2. Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition;Journal of Crystal Growth;2003-04

3. Vapour phase growth of epitaxial silicon carbide layers;Progress in Crystal Growth and Characterization of Materials;2003-01

4. Epitaxial growth ofn-type SiC using phosphine and nitrogen as the precursors;Journal of Applied Physics;2002-12-15

5. SiC materials-progress, status, and potential roadblocks;Proceedings of the IEEE;2002-06

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