Epitaxial growth ofn-type SiC using phosphine and nitrogen as the precursors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1516257
Reference11 articles.
1. Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
2. Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
3. Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor
4. Optical Characterization of Silicon Carbide Polytypes
5. SiC Dopant Incorporation Control Using Site-Competition CVD
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