The Nano Tungsten Thin Film and its Contacting Property with Aluminium Electrodes

Abstract

In this paper we report nanothickness tungsten (W) thin films with nanoscale thickness prepared by DC magnetron sputtering. Three kinds of samples were realized using micromachining technology, including two-wire and four-wire terminal configurations and only Al electrodes. Using four-wire terminal method, we studied on the electrical property of W film and the contacting resistance between W film and Al electrode. The results show that our as-deposited W film is β-W crystal structure and exhibits good resistive property. Al formed a good ohmic contact with W films. Both the resistivity of W film and the contacting resistance declined nearly linearly with the thickness increasing.