On the Amorphization of the Si/Ge Superlattices upon Ion Bombardement-Reference-Cited by-同舟云学术

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On the Amorphization of the Si/Ge Superlattices upon Ion Bombardement

Published:1997-05 Issue: Volume:248-249 Page:289-294
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sobolev N.A.¹,Gartner K.,Kaiser Ute²,Konig U.,Presting H.,Weber B.,Wendler Elke³,Wesch Werner³

Affiliation:

1. Russian Academy of Sciences

2. Universität Ulm

3. Friedrich Schiller Universität Jena

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.248-249.289.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of electron irradiation on p-n junctions in SiGe superlattices;physica status solidi (b);2014-12-19

2. Radiation effects in Si-Ge quantum size structure (Review);Semiconductors;2013-02

3. Pulsed laser annealing of Si–Ge superlattices;Materials Science and Engineering: C;2003-01

4. Coherent amorphization of Ge/Si multilayers with ion beams;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-05

5. Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation;MRS Proceedings;1998

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