Influence of electron irradiation on p-n junctions in SiGe superlattices-Reference-Cited by-同舟云学术

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Influence of electron irradiation on p-n junctions in SiGe superlattices

Published:2014-12-19 Issue:1 Volume:252 Page:153-158
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Siahlo Andrei I.¹,Poklonski Nikolai A.¹,Lastovski Stanislav B.²,Presting Hartmut³,Sobolev Nikolai A.⁴⁵

Affiliation:

1. Belarusian State University; pr. Nezavisimosti 220030 Minsk Belarus

2. Scientific-Practical Materials Research Centre; NAS of Belarus; P. Brovka Str.19 220072 Minsk Belarus

3. Daimler Research and Development Ulm; Wilhelm-Runge-Straße 11 89081 Ulm Germany

4. Departamento de Física and I3N; Universidade de Aveiro; 3810-193 Aveiro Portugal

5. National University of Science and Technology “MISiS”; 119049 Moscow Russia

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Symmetrically strained Si/Ge superlattices on Si substrates

2. Strain-balanced Si/SiGe type-II superlattices for near-infrared photodetection

3. Radiation Effects in Quantum Dot Structures

4. Ion and electron irradiation-induced effects in nanostructured materials

5. On the Amorphization of the Si/Ge Superlattices upon Ion Bombardement

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