Radiation Effects in Quantum Dot Structures
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Publisher
Elsevier
Reference444 articles.
1. The space radiation environment for electronics
2. Changes in ac Conductivity of Silicon with Electron Irradiation at 0.5 K
3. J. Bourgoin, M. Lannoo, Point Defects in Semiconductors. II, Experimental Aspects. Springer Series in Solid State Science, Vol. 35. (Springer, Berlin et al., 1983).
4. Threshold energy for atomic displacement in InP
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