Pulsed laser annealing of Si–Ge superlattices-Reference-Cited by-同舟云学术

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Pulsed laser annealing of Si–Ge superlattices

Published:2003-01 Issue:1-2 Volume:23 Page:19-22
ISSN:0928-4931
Container-title:Materials Science and Engineering: C
language:en
Short-container-title:Materials Science and Engineering: C

Author:

Sobolev N.A,Ivlev G.D,Gatskevich E.I,Leitão J.P,Fonseca A,Carmo M.C,Lopes A.B,Sharaev D.N,Kibbel H,Presting H

Publisher

Elsevier BV

Subject

Biomaterials,Bioengineering,Mechanics of Materials

Reference10 articles.

1. Influence of surfactants in Ge and Si epitaxy on Si(001)

2. Evidence of segregation in (100) strained Si1−xGexalloys grown at low temperature by molecular beam epitaxy

3. Melting and solidification of the surface layer of single-crystal silicon heated by pulsed laser radiation

4. In-plane Raman scattering of (001)-Si/Ge superlattices: Theory and experiment

5. Raman spectra ofc-Si1−xGexalloys

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation;Nanoscale Research Letters;2018-05-02

2. Formation of cellular structure in SiGe layers under nanosecond laser irradiation;Technical Physics Letters;2015-01

3. The structure and photoconductivity of SiGe/Si epitaxial layers modified by single-pulse laser radiation;Technical Physics Letters;2014-12

4. Structural Changes in SiGe/Si Layers Induced by Fast Crystallization;Subsecond Annealing of Advanced Materials;2014

5. Morphological properties of laser irradiated Si/Ge multilayers;Physica B: Condensed Matter;2009-12

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