Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation-Reference-Cited by-同舟云学术

Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation

Published:1998 Issue: Volume:540 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Sobolev N.A.,Kaiser U.,Khodos I.I.,Presting H.,König U.

Abstract

AbstractThe damage production in the Si9Ge6 superlattices (SLs) upon implantation of 150 keV Ar+ ions at 300 K was studied my means of the cross-sectional transmission electron microscopy (XTEM) and electron microdiffraction. It was found that the amorphization occurs in a narrow dose range of (1 – 2) × 1014 cm-2 via accumulation of point defects. The conclusion drawn earlier (Mater. Sci. Forum 248-249, 289 (1997)) on the coherent amorphization of the Si and Ge layers in the SLs was confirmed. Possible mechanisms of the layer interaction leading to the observed behavior are discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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