Affiliation:
1. Nippon Steel & Sumitomo Metal Corporation
2. Nagoya University
Abstract
We investigated dislocation behavior in the crystal grown on 6H-SiC (0001) by solution method using synchrotron X-ray topography and thermal chlorine etching. It was confirmed that basal plane dislocation was not newly formed in the grown layer. In addition, the positions of threading screw dislocations (TSDs) were displaced and some of them disappeared in the grown layer. This displacement was caused by the bending of the TSDs during growth.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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