Influence of Solution Flow on Step Bunching in Solution Growth of SiC Crystals-Reference-Cited by-同舟云学术

Influence of Solution Flow on Step Bunching in Solution Growth of SiC Crystals

Published:2013-06-26 Issue:8 Volume:13 Page:3691-3696
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Zhu Can¹²,Harada Shunta²,Seki Kazuaki³,Zhang Huayu¹,Niinomi Hiromasa²,Tagawa Miho²,Ujihara Toru²

Affiliation:

1. Department of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, HIT Campus, University Town, Xili, Shenzhen 518055, China

2. Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

3. Department of Crystalline Materials Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg400706u

Reference33 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. On the sublimation growth of SiC bulk crystals: development of a numerical process model

3. Optimizing the Temperature Profile during Sublimation Growth of SiC Single Crystals: Control of Heating Power, Frequency, and Coil Position

4. Influence of Anisotropic Thermal Conductivity in the Apparatus Insulation for Sublimation Growth of SiC: Numerical Investigation of Heat Transfer

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