Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth-Reference-Cited by-同舟云学术

Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth

Published:2012-05-25 Issue:6 Volume:12 Page:3209-3214
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Harada Shunta¹,Alexander ¹,Seki Kazuaki¹,Yamamoto Yuji¹,Zhu Can¹,Yamamoto Yuta¹,Arai Shigeo¹,Yamasaki Jun¹,Tanaka Nobuo¹,Ujihara Toru¹

Affiliation:

1. Department of Materials Science and Engineering, ‡Department of Crystalline Materials Science, and §EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg300360h

Reference30 articles.

1. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

2. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes

3. Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study

4. Solution growth of single crystalline 6H, 4H-SiC using Si–Ti–C melt

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