Solution growth of high-quality 3C-SiC crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates
2. The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
3. Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices
4. 3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates
5. Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics
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1. Enhancing growth speed of 3C–SiC using solution growth method by a new low temperature Mn-based cosolvent;Ceramics International;2024-06
2. Effects of solution height and crystal rotation on the solution flow behavior in the top-seeded solution growth of SiC single crystals;CrystEngComm;2024
3. High‐Quality and Wafer‐Scale Cubic Silicon Carbide Single Crystals;ENERGY & ENVIRONMENTAL MATERIALS;2023-12-10
4. Review of solution growth techniques for 4H-SiC single crystal;China Foundry;2023-03
5. Microwave heating and mechanism for seed-induced synthesis of SiC;Materials Today Communications;2022-06
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