Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes-Reference-Cited by-同舟云学术

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

Published:2018-06 Issue: Volume:924 Page:568-572
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Salemi Arash¹^ORCID,Elahipanah Hossein¹,Zetterling Carl Mikael¹,Östling Mikael¹

Affiliation:

1. KTH-Royal Institute of Technology

Abstract

Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.924.568.pdf

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