Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes-Reference-Cited by-同舟云学术

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Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Salemi Arash,Elahipanah Hossein,Buono Benedetto,Hallen Anders,Hassan Jawad Ul,Bergman Peder,Malm Gunnar,Zetterling Carl-Mikael,Ostling Mikael

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7118854/7123286/07123441.pdf?arnumber=7123441

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

2. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers;APL Materials;2023-03-01

3. Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density;Applied Physics Letters;2023-02-27

4. Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes;Materials Science Forum;2022-05-31

5. The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers;physica status solidi (b);2022-01-22

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