Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes-Reference-Cited by-同舟云学术

Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes

Published:2022-05-31 Issue: Volume:1062 Page:588-592
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sundaramoorthy Vinoth¹,Mihaila Andrei¹,Spejo Lucas²,Minamisawa Renato Amaral²,Knoll Lars¹

Affiliation:

1. Hitachi Energy

2. Fachhochschule Nordwestschweiz

Abstract

6.5 kV SiC PiN diode with JTE and p+ rings termination was fabricated and characterized. The static and dynamic performance of SiC PiN diode were compared with that of SiC JBS diode and silicon diode, while switched in combination with a silicon IGBT. SiC PiN provides clear advantage while operating at higher current densities (above 100 A/cm2) and had lower leakage current. When switched together with a silicon IGBT, they contribute to losses similar to that of a SiC JBS diode.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.1062.588.pdf

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