The Investigation of a 6.5-kV, 1-kA SiC Diode Module for Medium Voltage Converters
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/6709815/06578550.pdf?arnumber=6578550
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Integration of a Next Generation SiC Switch-based Voltage Multiplier in Multi-stage Converters for Increased Voltage Step-up Capability;IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society;2022-10-17
2. Static and Dynamic Performance of Charge-Carrier Lifetime-Tailored High-Voltage SiC p-i-n Diodes With Capacitively Assisted Switching;IEEE Transactions on Power Electronics;2022-10
3. Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes;Materials Science Forum;2022-05-31
4. Improved switching transient model suitable for power loss evaluation of SiC-based asymmetric H-bridge power converters in SRGs;Journal of Power Electronics;2021-05-27
5. Investigation and Emulation of Junction Temperature for High-Power IGBT Modules Considering Grid Codes;IEEE Journal of Emerging and Selected Topics in Power Electronics;2018-06
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