21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension-Reference-Cited by-同舟云学术

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21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension

Published:2012-05-15 Issue:6 Volume:5 Page:064001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Niwa Hiroki,Suda Jun,Kimoto Tsunenobu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=6/a=064001/pdf

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices;Microelectronics Journal;2024-10

2. 250 μm Thick Detectors for Neutron Detection: Design, Electrical Characteristics, and Detector Performances;Key Engineering Materials;2024-08-22

3. A Novel Tapered Doping Tail Modulated Single Junction Termination Extension for High Voltage 4H-SiC Devices;IEEE Electron Device Letters;2024-07

4. Hybrid multimodule DC–DC converters accelerated by wide bandgap devices for electric vehicle systems;Scientific Reports;2024-02-27

5. Experimental determination of intrinsic carrier density in 4H-SiC based on electron diffusion current in an npn bipolar junction transistor;Journal of Applied Physics;2023-12-15

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