Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al<sup>+</sup> and B<sup>+</sup>-Reference-Cited by-同舟云学术

Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al⁺ and B⁺

Published:2018-06 Issue: Volume:924 Page:573-576
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Ghandi Reza¹,Losee Peter¹,Bolotnikov Alexander¹,Lilienfeld David¹

Affiliation:

1. GE Global Research

Abstract

In this work, >2kV PiN diodes with >10um deep implant of B+ and 6um deep implant of Al+ have been fabricated to evaluate the quality of resulting pn junction after high-energy implantation. Acceptable low leakage currents at reverse bias and stable avalanche breakdown were observed for high energy implanted diodes (HEI-diodes) when compared to No-HEI-diodes that suggests minimal defect sites present after activation anneal.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.924.573.pdf

Reference4 articles.

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3. T.Kimoto et al., High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes,, J. Appl. Phys. 91(7) 2002, pp.4242-4248.

4. H. Matsurra et al., Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped pp-type 4H-SiC epilayers,, J. Appl. Phys. 96 (5) 2004, pp.2708-2715.

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