Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers-Reference-Cited by-同舟云学术

Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers

Published:2004-09 Issue:5 Volume:96 Page:2708-2715
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Matsuura Hideharu,Komeda Masahiko,Kagamihara Sou,Iwata Hirofumi,Ishihara Ryohei,Hatakeyama Tetsuo,Watanabe Takatoshi,Kojima Kazutoshi,Shinohe Takashi,Arai Kazuo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1775298

Reference44 articles.

1. Conductivity Anisotropy in Epitaxial 6H and 4H Sic

2. Free electron density and mobility in high-quality 4H–SiC

3. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

4. Site effect on the impurity levels in4H,6H, and15RSiC

5. I. Nashiyama,Properties of Silicon Carbide, edited by G. L. Harris (INSPEC, London, 1995), p. 87.

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