High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1459096
Reference15 articles.
1. Phosphorus and boron implantation in 6H–SiC
2. Doping of SiC by Implantation of Boron and Aluminum
3. Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics
4. Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
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2. Design and simulation of gallium nitride trench MOSFETs for applications with high lifetime demand;Journal of Computational Electronics;2021-07-02
3. Defects and electrical properties in Al-implanted 4H-SiC after activation annealing*;Chinese Physics B;2019-10-01
4. Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (>12MeV) of Al+ and B+;Materials Science Forum;2018-06
5. A Low Turn-Off Loss 4H-SiC Trench IGBT With Schottky Contact in the Collector Side;IEEE Transactions on Electron Devices;2017-11
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