Design and simulation of gallium nitride trench MOSFETs for applications with high lifetime demand
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10825-021-01736-1.pdf
Reference50 articles.
1. Rajabi, S., Mandal, S., Ercan, B., Li, H., Laurent, M.A., Keller, S., Chowdhury, S.: A demonstration of nitrogen polar gallium nitride current aperture vertical electron transistor. IEEE Electron Device Lett. 40(6), 885–888 (2019). https://doi.org/10.1109/LED.2019.2914026
2. Nakamura, T., Nakano, Y., Aketa, M., Nakamura, R., Mitani, S., Sakairi, H., Yokotsuji, Y.: High performance SiC trench devices with ultra-low Ron. In: 2011 International Electron Devices Meeting, pp 26.5.1–26.5.3, (2011). https://doi.org/10.1109/IEDM.2011.6131619
3. Peters, D., Siemieniec, R., Aichinger, T., Basler, T., Esteve, R., Bergner, W., Kueck, D.: Performance and ruggedness of 1200 V SiC trench MOSFET. In: 2017 29th International Symposium on Power Semiconductor Devices and IC’s (ISPSD), pp 239–242, (2017). https://doi.org/10.23919/ISPSD.2017.7988904
4. Li, R., Cao, Y., Chen, M., Chu, R.: 600 V/ $$1.7~{\Omega }$$ normally-off GaN vertical trench metal oxide semiconductor field effect transistor. IEEE Electron Device Lett. 37(11), 1466–1469 (2016). https://doi.org/10.1109/LED.2016.2614515
5. Oka, T., Ina, T., Ueno, Y., Nishii, J.: 100 A vertical GaN trench MOSFETs with a current distribution layer. In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 303–306, (2019).https://doi.org/10.1109/ISPSD.2019.8757621
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