600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor

Published:2016-11 Issue:11 Volume:37 Page:1466-1469
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Ray^ORCID,Cao Yu,Chen Mary,Chu Rongming

Funder

ARPA-E SWITCHES Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7605558/07586076.pdf?arnumber=7586076

Cited by 91 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen-doped colloidal GaN quantum dots with blue emission;Materials Today Chemistry;2024-01

2. Impact of temperature variation on linearity parameters of nanotube surrounding gate (NT‐SG) MOSFETs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-14

3. A Novel GaN Superjunction FinFET Power Device With a P-Type NiO Pillar for Improved Performance;IEEE Transactions on Electron Devices;2023-12

4. Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-09

5. GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance;Micromachines;2023-05-31

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP