Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques
Author:
Affiliation:
1. Microelectronic Research Group
2. Université de Tours
3. CNRS-Université de Montpellier
4. National Technical University of Athens
Abstract
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.924.653.pdf
Reference7 articles.
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2. M. Buzzo, M. Ciappa, M. Stangoni, W. Fichtner, Microelectronics Reliability 45, 1499, (2005).
3. S. Chung, V. Wheeler, R. Myers-Ward, L. O. Nyakiti, C. R. Eddy, Jr., D. K. Gaskill, M. Skowronski, and Y. N. Picard1, J Appl. Phys., vol. 110-2011, p.014902.
4. R. Elpelt, B. Zippelius, S. Doering, U. Winkler, Mater. Sci. Forum, 897, (2017).
5. F. Giannazzo, L. Calcagno, F. Roccaforte, V. Raineri, Appl. Surface Sci. 184(1-4), 183 (2001).
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1. 4H-SiC p-Type Doping Determination from Secondary Electrons Imaging;Materials Science Forum;2019-07
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