Secondary electron dopant contrast imaging of compound semiconductor junctions-Reference-Cited by-同舟云学术

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Secondary electron dopant contrast imaging of compound semiconductor junctions

Published:2011-07 Issue:1 Volume:110 Page:014902
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chung Suk,Wheeler Virginia,Myers-Ward Rachael,Nyakiti Luke O.,Eddy Charles R.,Gaskill D. Kurt,Skowronski Marek,Picard Yoosuf N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3597785

Reference26 articles.

1. Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update

2. Dopant mapping for the nanotechnology age

3. Imaging single atoms using secondary electrons with an aberration-corrected electron microscope

4. Dopant profiling with the scanning electron microscope—A study of Si

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1. Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices;Solid State Phenomena;2024-08-21

2. Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates;Journal of Applied Physics;2024-07-22

3. Optimized dopant imaging for GaN by a scanning electron microscopy;Journal of Microscopy;2023-05-31

4. The Mechanistic Determination of Doping Contrast from Fermi Level Pinned Surfaces in the Scanning Electron Microscope Using Energy-Filtered Imaging and Calculated Potential Distributions;Microscopy and Microanalysis;2022-10-01

5. Scanning Electron Microscopy;Materials Characterization;2019

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