Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices

Author:

Vuillermet Enora1,Wu Kuan Ting1,Sedilot Anael1,Deturche Regis1,Bercu Nicolas2,Usureau Elise1,Beal Jérémie1,Lazar Mihai1

Affiliation:

1. University of Technology of Troyes

2. University of Reims Champagne-Ardenne

Abstract

Investigation of the doped areas in 4H-SiC power devices has been done by non-destructive characterization methods. It consists of local surface potential measurements by Kelvin Probe Force Microscopy (KPFM) coupled with scanning electron microscopy (SEM) and µ-Raman spectroscopy. Near-field mappings of the devices’ surface have been realized, allowing us to discern the differently doped areas.

Publisher

Trans Tech Publications, Ltd.

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3