Dopant profiling with the scanning electron microscope—A study of Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1476968
Reference13 articles.
1. Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
2. Mapping electrically active dopant profiles by field‐emission scanning electron microscopy
3. Mechanism for secondary electron dopant contrast in the SEM
4. Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging
5. High spatial resolution surface potential measurements using secondary electrons
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