4H-SiC p-Type Doping Determination from Secondary Electrons Imaging
-
Published:2019-07
Issue:
Volume:963
Page:328-331
-
ISSN:1662-9752
-
Container-title:Materials Science Forum
-
language:
-
Short-container-title:MSF
Author:
Kayambaki Maria1, Makris Nikolaos1, Tsagaraki Katerina1, Peyré Hervé2, Stavrinidis Antonis1, Konstantinidis George1, Zekentes Konstantinos1
Affiliation:
1. Microelectronic Research Group (MRG)-IESL 2. UMR 5221 CNRS-Université de Montpellier
Abstract
Secondary electron imaging of SiC epi-structures is commonly used as it allows doping topography i.e. the knowledge of the spatial extension of differently doped layers. Determination of the doping level of the layers was not possible until now. The present work presents how to use this technique for 4H-SiC p-type doping determination. This is indeed, possible for specific experimental data analysis and for doping levels higher than 1017cm-3.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. M. Buzzo, M. Ciappa, J. Millan, P. Godignon, W. Fichtner, Microelectronic Engineering 84 (2007) 413–418. 2. S. Chung, V. Wheeler, R. Myers-Ward, L. O. Nyakiti, C. R. Eddy, Jr., D. K. Gaskill, M. Skowronski, and Y. N. Picard1, J Appl. Phys., vol. 110, (2011), p.014902. 3. K. Tsagaraki, M. Nafouti, H. Peyré, K. Vamvoukakis, N. Makris, M. Kayambaki, A. Stavrinidis, G. Konstantinidis, M. Panagopoulou, D. Alquier, K. Zekentes, Mat. Sci. Forum. 924 (2018) pp.653-656. 4. A. Chee et al. ,J. Appl. Phys. 109, 013109 (2011);. 5. M. Buzzo, M. Ciappa, M. Stangoni and W. Fichtner, 2006 IEEE Int. Reliability Phys. Symp. Proceedings, San Jose, CA, 2006, pp.560-565.
|
|